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Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions

Zhu, Wenkai; Lin, Hailong; Yan, Faguang; Hu, Ce; Wang, Ziao; Zhao, Lixia; Deng, Yongcheng; Kudrynskyi, Zakhar R.; Zhou, Tong; Kovalyuk, Zakhar D.; Zheng, Yuanhui; Patanè, Amalia; Žutić, Igor; Li, Shushen; Zheng, Houzhi; Wang, Kaiyou

Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions Thumbnail


Authors

Wenkai Zhu

Hailong Lin

Faguang Yan

Ce Hu

Ziao Wang

Lixia Zhao

Yongcheng Deng

Profile image of ZAKHAR KUDRYNSKYI

ZAKHAR KUDRYNSKYI ZAKHAR.KUDRYNSKYI@NOTTINGHAM.AC.UK
Nottingham Research Anne Mclaren Fellows

Tong Zhou

Zakhar D. Kovalyuk

Yuanhui Zheng

Igor Žutić

Shushen Li

Houzhi Zheng

Kaiyou Wang



Abstract

2D layered chalcogenide semiconductors have been proposed as a promising class of materials for low-dimensional electronic, optoelectronic, and spintronic devices. Here, all-2D van der Waals vertical spin-valve devices, that combine the 2D layered semiconductor InSe as a spacer with the 2D layered ferromagnetic metal Fe3GeTe2 as spin injection and detection electrodes, are reported. Two distinct transport behaviors are observed: tunneling and metallic, which are assigned to the formation of a pinhole-free tunnel barrier at the Fe3GeTe2/InSe interface and pinholes in the InSe spacer layer, respectively. For the tunneling device, a large magnetoresistance (MR) of 41% is obtained under an applied bias current of 0.1 µA at 10 K, which is about three times larger than that of the metallic device. Moreover, the tunneling device exhibits a lower operating bias current but a more sensitive bias current dependence than the metallic device. The MR and spin polarization of both the metallic and tunneling devices decrease with increasing temperature, which can be fitted well by Bloch's law. These findings reveal the critical role of pinholes in the MR of all-2D van der Waals ferromagnet/semiconductor heterojunction devices.

Citation

Zhu, W., Lin, H., Yan, F., Hu, C., Wang, Z., Zhao, L., …Wang, K. (2021). Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions. Advanced Materials, 33(51), Article 2104658. https://doi.org/10.1002/adma.202104658

Journal Article Type Article
Acceptance Date Sep 12, 2021
Online Publication Date Oct 13, 2021
Publication Date Dec 1, 2021
Deposit Date Sep 13, 2021
Publicly Available Date Oct 14, 2022
Journal Advanced Materials
Print ISSN 0935-9648
Electronic ISSN 1521-4095
Publisher Wiley
Peer Reviewed Peer Reviewed
Volume 33
Issue 51
Article Number 2104658
DOI https://doi.org/10.1002/adma.202104658
Keywords Mechanical Engineering; Mechanics of Materials; General Materials Science
Public URL https://nottingham-repository.worktribe.com/output/6237842
Publisher URL https://onlinelibrary.wiley.com/doi/abs/10.1002/adma.202104658
Additional Information This is the peer reviewed version of the following article: Zhu, W., Lin, H., Yan, F., Hu, C., Wang, Z., Zhao, L., Deng, Y., Kudrynskyi, Z. R., Zhou, T., Kovalyuk, Z. D., Zheng, Y., Patanè, A., Žutić, I., Li, S., Zheng, H., Wang, K., Large Tunneling Magnetoresistance in van der Waals Ferromagnet/Semiconductor Heterojunctions. Adv. Mater. 2021, 2104658, which has been published in final form at https://doi.org/10.1002/adma.202104658. This article may be used for non-commercial purposes in accordance with Wiley Terms and Conditions for Use of Self-Archived Versions. This article may not be enhanced, enriched or otherwise transformed into a derivative work, without express permission from Wiley or by statutory rights under applicable legislation. Copyright notices must not be removed, obscured or modified. The article must be linked to Wiley’s version of record on Wiley Online Library and any embedding, framing or otherwise making available the article or pages thereof by third parties from platforms, services and websites other than Wiley Online Library must be prohibited.

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